Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

doi:10.1143/JJAP.35.L810

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, JF	en_US
dc.contributor.author	Chen, NC	en_US
dc.contributor.author	Huang, WY	en_US
dc.contributor.author	Lee, WI	en_US
dc.contributor.author	Feng, MS	en_US
dc.date.accessioned	2014-12-08T15:02:33Z	-
dc.date.available	2014-12-08T15:02:33Z	-
dc.date.issued	1996-07-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.35.L810	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1207	-
dc.description.abstract	The transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaN	en_US
dc.subject	deep level	en_US
dc.subject	transient capacitance	en_US
dc.subject	OMVPE	en_US
dc.title	Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.35.L810	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	7A	en_US
dc.citation.spage	L810	en_US
dc.citation.epage	L812	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electrophysics	en_US
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