Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes

Abstract

Visible InGaP-InGaAlP resonant-cavity light-emitting diodes with low-temperature sensitivity output characteristics were demonstrated. By means of widening the resonant cavity to a thickness of three wavelength (3 A), the degree of power variation between 25 degrees C and 95 degrees C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1 - lambda avity) to -0.6 dB. An output power of 2.4 mW was achieved at 70 mA. The external quantum efficiency achieved a maximum of 3% at 13 mA and dropped slowly with increased current for the device. The external quantum efficiency at 20 mA dropped only 14% with elevated temperature from 25 degrees C to 95 degrees C. The current dependent far-field patterns also showed that the emission always took place perfectly in the normal direction, which was suitable for plastic fiber data transmission.