標題: | Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs |
作者: | Chen, Jun-Rong Ko, Tsung-Shine Lu, Tien-Chang Chang, Yi-An Kuo, Hao-Chung Kuo, Yen-Kuang Tsai, Jui-Yen Laih, Li-Wen Wang, Shing-Chung 光電工程學系 Department of Photonics |
關鍵字: | Leakage current;modeling;polymethyl methacrylate plastic optic fiber (POF);resonant-cavity light-emitting diode (RCLED);semiconductor device |
公開日期: | 1-七月-2008 |
摘要: | InGaP/AIGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1 lambda) to three optical wavelengths (3 lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 degrees C to 95 degrees C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-lambda cavity RCLEDs and 3-lambda cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-lambda cavity AIGaInP RCLEDs. |
URI: | http://dx.doi.org/10.1109/JLT.2008.920639 http://hdl.handle.net/11536/8686 |
ISSN: | 0733-8724 |
DOI: | 10.1109/JLT.2008.920639 |
期刊: | JOURNAL OF LIGHTWAVE TECHNOLOGY |
Volume: | 26 |
Issue: | 13-16 |
起始頁: | 1891 |
結束頁: | 1900 |
顯示於類別: | 期刊論文 |