標題: | Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs |
作者: | Chan, Chien-Tai Tang, Chun-Jung Wang, Tahui Wang, Howard C. -H. Tang, Denny D. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | HfSiON;positive bias temperature instability (PBTI);transient measurement;trap generation;two-stage degradation |
公開日期: | 1-六月-2006 |
摘要: | Drain current degradation in HfSiON gate, dielectric nMOSFETs by positive gate bias and temperature stress is investigated by using a fast transient measurement technique. The degradation exhibits two stages, featuring a different degradation rate and stress temperature dependence. The first-stage degradation is attributed to the charging of preexisting high-k dielectric traps and has a log(t) dependence on stress time, whereas the second-stage degradation is mainly caused by new high-k trap creation. The high-k trap growth rate is characterized by two techniques, namely 1) a recovery transient technique and 2) a charge-pumping technique. Finally, the effect of processing on high-k trap growth is evaluated. |
URI: | http://dx.doi.org/10.1109/TED.2006.874160 http://hdl.handle.net/11536/12181 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2006.874160 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 53 |
Issue: | 6 |
起始頁: | 1340 |
結束頁: | 1346 |
顯示於類別: | 期刊論文 |