標題: Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs
作者: Chan, Chien-Tai
Tang, Chun-Jung
Wang, Tahui
Wang, Howard C. -H.
Tang, Denny D.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfSiON;positive bias temperature instability (PBTI);transient measurement;trap generation;two-stage degradation
公開日期: 1-Jun-2006
摘要: Drain current degradation in HfSiON gate, dielectric nMOSFETs by positive gate bias and temperature stress is investigated by using a fast transient measurement technique. The degradation exhibits two stages, featuring a different degradation rate and stress temperature dependence. The first-stage degradation is attributed to the charging of preexisting high-k dielectric traps and has a log(t) dependence on stress time, whereas the second-stage degradation is mainly caused by new high-k trap creation. The high-k trap growth rate is characterized by two techniques, namely 1) a recovery transient technique and 2) a charge-pumping technique. Finally, the effect of processing on high-k trap growth is evaluated.
URI: http://dx.doi.org/10.1109/TED.2006.874160
http://hdl.handle.net/11536/12181
ISSN: 0018-9383
DOI: 10.1109/TED.2006.874160
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 6
起始頁: 1340
結束頁: 1346
Appears in Collections:Articles


Files in This Item:

  1. 000238154200008.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.