标题: An improved parameter-extraction method of SiGe HBTs' substrate network
作者: Chen, HY
Chen, KM
Huang, GW
Chang, CY
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: SiGeHBTs;substrate network parameter extraction
公开日期: 1-六月-2006
摘要: In this letter, an improved method for substrate network parameter extraction of SiGe heterojunction bipolar transistors (HBTs) is proposed. It is found that, without taking the intrinsic circuit elements into consideration, the conductance of substrate network will be underestimated while the susceptance of substrate network will be overestimated. Therefore, an iteration procedure is developed,to determine the intrinsic circuit elements of SiGe HBTs first. The intrinsic circuit elements are then applied to remove their influence on the substrate network parameter extraction. Compared with the conventional method, the proposed one can avoid some unphysical modeling results and provide reliable substrate network parameters.
URI: http://dx.doi.org/10.1109/LMWC.2006.875630
http://hdl.handle.net/11536/12228
ISSN: 1531-1309
DOI: 10.1109/LMWC.2006.875630
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 16
Issue: 6
起始页: 321
结束页: 323
显示于类别:Articles


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