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dc.contributor.authorPeng, WCen_US
dc.contributor.authorWu, YSen_US
dc.date.accessioned2014-12-08T15:16:37Z-
dc.date.available2014-12-08T15:16:37Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2199613en_US
dc.identifier.urihttp://hdl.handle.net/11536/12267-
dc.description.abstractAn InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEnhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2199613en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume88en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000237321600017-
dc.citation.woscount30-
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