標題: | High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates |
作者: | Wu, YC Chang, TC Liu, PT Chou, CW Wu, YC Tu, CH Chang, CY 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | metal-induced lateral-crystallization (MILC);multigate;nanowire;thin-film transistor (TFT) |
公開日期: | 1-五月-2006 |
摘要: | In this study, pattern-dependent nickel (Ni) metal-induced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage (V-th) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low Vth, a steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowire-channel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics. |
URI: | http://dx.doi.org/10.1109/TNANO.2006.869948 http://hdl.handle.net/11536/12277 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2006.869948 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 5 |
Issue: | 3 |
起始頁: | 157 |
結束頁: | 162 |
顯示於類別: | 會議論文 |