完整後設資料紀錄
DC 欄位語言
dc.contributor.author陳智en_US
dc.contributor.author杜經寧en_US
dc.contributor.author呂佳凌en_US
dc.date.accessioned2015-05-12T02:59:32Z-
dc.date.available2015-05-12T02:59:32Z-
dc.date.issued2015-03-01en_US
dc.identifier.govdocC25D003/38zh_TW
dc.identifier.govdocC30B029/02zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/122781-
dc.description.abstract本發明係有關於一種單晶銅,其具有[100]方向,且體積係介於0.1~4.0×10 6 μm 3 。本發明更提供一種單晶銅之製備方法及包含其之基板。 The present invention relates to a Cu single crystal having [100] crystal orientation and a volume of 0.1~ 4.0×10 6 μm 3 . The present invention further provides a manufacturing method for Cu single crystals and a substrate comprising the same.zh_TW
dc.language.isozh_TWen_US
dc.title單晶銅、其製備方法及包含其之基板zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201508099zh_TW
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