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dc.contributor.author李安謙en_US
dc.contributor.author湯毓哲en_US
dc.contributor.author郭子瑋en_US
dc.date.accessioned2015-05-12T02:59:33Z-
dc.date.available2015-05-12T02:59:33Z-
dc.date.issued2015-02-16en_US
dc.identifier.govdocC23C016/455zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/122784-
dc.description.abstract本發明係有關於一種用於金屬有機化學氣相沉積的真空壓力控制裝置,包括:一真空腔體;一氣體源,係提供氣體給該真空腔體;一真空閥門,係調節該真空腔體之真空壓力;一真空幫浦,係透過該真空閥門抽吸該真空腔體內之氣體;一真空壓力計,係量測該真空腔體之真空壓力;以及一真空閥門控制器,係根據該真空壓力計調整該真空閥門。 The invention relates to a vacuum pressure control device for MOCVD, which comprise: a vacuum chamber, a gas source for providing gas to the vacuum chamber, a vacuum valve for adjusting the vacuum pressure of the vacuum chamber, a vacuum pump for aspirating the gas inside the vacuum chamber through the vacuum valve, a vacuum pressure gauge for measuring the vacuum pressure of the vacuum chamber, and a vacuum valve controller for adjusting the vacuum valve according to the vacuum pressure gauge.zh_TW
dc.language.isozh_TWen_US
dc.title用於金屬有機化學氣相沉積的真空壓力控制裝置zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201506190zh_TW
Appears in Collections:Patents


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