標題: Method of manufacturing semiconductor device
作者: Liu Po-Tsun
Wang Wei-Ya
Teng Li-Feng
公開日期: 10-三月-2015
摘要: The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.
官方說明文件#: H01L029/786
H01L021/322
URI: http://hdl.handle.net/11536/122809
專利國: USA
專利號碼: 08975164
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