標題: Design and fabrication of a photosensing nanodevice structure with CdSe and Au nanoparticles on a silicon chip
作者: Tu, CC
Li, YK
Chen, TM
Wu, CY
應用化學系
電子工程學系及電子研究所
Department of Applied Chemistry
Department of Electronics Engineering and Institute of Electronics
關鍵字: nanotechnology;photocurrent;photodetectors;Schottky diodes
公開日期: 1-May-2006
摘要: A newly developed tour-layered photosensing nanodevice was fabricated by integrating nanoparticles (NPs) on a silicon substrate. Through ionic interaction, negatively charged An NPs (similar to 15 nm) were assembled in alternate layers with positively charged CdSe NPs (similar to 5 nm) on the silicon oxide surface between the two Al electrodes. The silicon oxide surface after each step of the fabrication process was observed and evaluated by images obtained from the scanning electron microscope. By applying voltage biases across the electrodes, the currents were measured in the dark and under illumination using a 375-nm laser. It was found that a constant photocurrent increment can be obtained for different voltage biases, and the nanodevice structure with a longer length had less conductivity but a larger increment of photocurrent after illumination. In addition, the efficiency rate of photocurrent generation is much higher in comparison to that obtained from CdSe thin film. The fabrication process integrated a newly developed model of a diode-resistor array of semiconductor-metal junctions between CdSe and An NPs (nano-Schottky-diode structures), which can successfully explain the measured results. While nanotechnology has unprecedented advantages over the traditional silicon electronics, its technology presents physical challenges. However, the success of the fabrication of the multilayered photosensing nanodevice directly on the silicon chip paves the way for further applications and research.
URI: http://dx.doi.org/10.1109/TNANO.2006.874052
http://hdl.handle.net/11536/12282
ISSN: 1536-125X
DOI: 10.1109/TNANO.2006.874052
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 5
Issue: 3
起始頁: 284
結束頁: 290
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