METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG Li	en_US
dc.contributor.author	HO Yen-Teng	en_US
dc.date.accessioned	2015-05-12T02:59:53Z	-
dc.date.available	2015-05-12T02:59:53Z	-
dc.date.issued	2015-01-01	en_US
dc.identifier.govdoc	C30B023/02	zh_TW
dc.identifier.govdoc	C30B025/18	zh_TW
dc.identifier.govdoc	C30B029/40	zh_TW
dc.identifier.govdoc	C30B023/06	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/122876	-
dc.description.abstract	The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20150004435	zh_TW
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