水平擴散金氧半導體元件

Abstract

一種水平擴散N型金氧半導體元件，包括半導體基底、磊晶層在半導體基底上、圖案化的隔離層在磊晶層上、N型雙擴散區於圖案化的隔離層的第一主動區中、N型濃摻雜汲極區設置於N-型雙擴散區中、P型體摻雜區設置於圖案化的隔離層的第二主動區中、一對相鄰的N型濃摻雜源極區和P型濃摻雜源極區設置於P型體摻雜區中、第一閘極結構設置於通道區上以及第二閘極結構設置於第二主動區上。第二閘極結構與第一閘極結構相隔預定距離。N型雙擴散區的製作方式包括離子佈植及磊晶層摻雜。 A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in the NDDD region, a P-body diffused region disposed in a second active region of the patterned isolation layer, a neighboring pair of a N+ heavily doped source region and a P+ heavily doped source region disposed in the P-body diffused region, a first gate structure disposed above a channel region of the patterned isolation layer and a second gate structure disposed above the second active region. The second gate structure and the first gate structure are spaced at a predetermined distance. A making method of the NDDD region includes using an ion implant and an epitaxy layer doping.