完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsu, CYen_US
dc.contributor.authorYao, DJen_US
dc.contributor.authorLiang, SWen_US
dc.contributor.authorChen, Cen_US
dc.contributor.authorYeh, ECCen_US
dc.date.accessioned2014-12-08T15:16:40Z-
dc.date.available2014-12-08T15:16:40Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02692552en_US
dc.identifier.urihttp://hdl.handle.net/11536/12297-
dc.description.abstractThree-dimensional simulation was performed to investigate the temperature and current density distribution in flip-chip solder joints with Cu traces during current stressing. It was found that the Cu traces can reduce the Joule heating effect significantly at high stressing currents. When the solder joints were stressed by 0.6 A, the average temperature increase in solder bumps with the Al traces was 26.7 degrees C, and it was deceased to 18.7 degrees C for the solder joint with the Cu traces. Hot spots exist in the solder near the entrance points of the Al or Cu traces. The temperature increases in the hot spot were 29.3 degrees C and 20.6 degrees C, for solder joints with the Al traces and Cu traces, respectively. As for current density distribution, the maximum current density inside the solder decreased slightly from 1.66 X 10(5) A/cm(2) to 1.46 X 10(5) A/cm(2) when the Al traces were replaced by the Cu traces. The solder joints with the Cu traces exhibited lower Joule heating and current crowding effects than those with the Al traces, which was mainly attributed to the lower electrical conductivity of the Cu traces. Therefore, the solder joints with the Cu traces are expected to have better electromigration resistance.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectflip chipen_US
dc.subjectcurrent crowdingen_US
dc.titleTemperature and current-density distributions in flip-chip solder joints with Cu tracesen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF02692552en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume35en_US
dc.citation.issue5en_US
dc.citation.spage947en_US
dc.citation.epage953en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000237893100021-
dc.citation.woscount3-
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