完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Woei-Cherng | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Peng, Wu-Chin | en_US |
dc.contributor.author | Yang, Wen-Luh | en_US |
dc.contributor.author | Wang, Jer-Chyi | en_US |
dc.contributor.author | Chen, Jian-Hao | en_US |
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Lai, Chao-Sung | en_US |
dc.contributor.author | Yang, Tsung-Yu | en_US |
dc.contributor.author | Chen, Tzu-Ping | en_US |
dc.contributor.author | Chen, Chien-Hung | en_US |
dc.contributor.author | Lin, Chih-Hung | en_US |
dc.contributor.author | Chen, Hwi-Huang | en_US |
dc.contributor.author | Ko, Joe | en_US |
dc.date.accessioned | 2014-12-08T15:16:43Z | - |
dc.date.available | 2014-12-08T15:16:43Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.isbn | 978-1-4244-0584-8 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12323 | - |
dc.description.abstract | High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers | en_US |
dc.citation.spage | 10 | en_US |
dc.citation.epage | 11 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000247059300004 | - |
顯示於類別: | 會議論文 |