完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorPeng, Wu-Chinen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorWang, Jer-Chyien_US
dc.contributor.authorChen, Jian-Haoen_US
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorLai, Chao-Sungen_US
dc.contributor.authorYang, Tsung-Yuen_US
dc.contributor.authorChen, Tzu-Pingen_US
dc.contributor.authorChen, Chien-Hungen_US
dc.contributor.authorLin, Chih-Hungen_US
dc.contributor.authorChen, Hwi-Huangen_US
dc.contributor.authorKo, Joeen_US
dc.date.accessioned2014-12-08T15:16:43Z-
dc.date.available2014-12-08T15:16:43Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0584-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/12323-
dc.description.abstractHigh-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.en_US
dc.language.isoen_USen_US
dc.titleA highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thicknessen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papersen_US
dc.citation.spage10en_US
dc.citation.epage11en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000247059300004-
顯示於類別:會議論文