標題: | Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2) |
作者: | Shih, Yi-Sen Lin, Pei-Yin Chen, Jr-Yu Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Electron microscopy;X-ray techniques;Thin films |
公開日期: | 15-十二月-2014 |
摘要: | On semipolar GaN(1 1 (2) over bar 2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(1 1 (2) over bar 2)//GaN(1 1 (2) over bar 2) and [(1) over bar 1 0 0](ZnO)//[(1) over bar 1 0 0](GaN) which is expected for ZnO growth on GaN(1 1 (2) over bar 2), while the other is a newly found relationship of ZnO((1) over bar 0 1 (1) over bar)//GaN(0 0 0 2) and [5 (7) over bar 2 (3) over bar](ZnO)//[(1) over bar 1 0 0](GaN). (C) 2014 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.matlet.2014.08.132 http://hdl.handle.net/11536/123860 |
ISSN: | 0167-577X |
DOI: | 10.1016/j.matlet.2014.08.132 |
期刊: | MATERIALS LETTERS |
Volume: | 137 |
起始頁: | 96 |
結束頁: | 98 |
顯示於類別: | 期刊論文 |