Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells

標題:	Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
作者:	Hsu, Ching-Hsiang Chang, Edward Yi Chang, Hsun-Jui Yu, Hung-Wei Hong Quan Nguyen Chung, Chen-Chen Maa, Jer-Shen Pande, Krishna 材料科學與工程學系照明與能源光電研究所電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics
關鍵字:	III-V concentrator solar cell;copper metallization;ohmic contact;low cost
公開日期:	1-Dec-2014
摘要:	Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.
URI:	http://dx.doi.org/10.1109/LED.2014.2361923 http://hdl.handle.net/11536/123865
ISSN:	0741-3106
DOI:	10.1109/LED.2014.2361923
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	35
Issue:	12
起始頁:	1275
結束頁:	1277
Appears in Collections:	Articles

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