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dc.contributor.authorHsu, Ching-Hsiangen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorChang, Hsun-Juien_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorHong Quan Nguyenen_US
dc.contributor.authorChung, Chen-Chenen_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorPande, Krishnaen_US
dc.date.accessioned2015-07-21T11:20:56Z-
dc.date.available2015-07-21T11:20:56Z-
dc.date.issued2014-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2361923en_US
dc.identifier.urihttp://hdl.handle.net/11536/123865-
dc.description.abstractCopper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.en_US
dc.language.isoen_USen_US
dc.subjectIII-V concentrator solar cellen_US
dc.subjectcopper metallizationen_US
dc.subjectohmic contacten_US
dc.subjectlow costen_US
dc.titleGold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2361923en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue12en_US
dc.citation.spage1275en_US
dc.citation.epage1277en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000345575400038en_US
dc.citation.woscount0en_US
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