標題: | Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates |
作者: | Binh Tinh Tran Lin, Kung-Liang Sahoo, Kartika Chandra Chung, Chen-Chen Chi-Lang Nguyen Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | GaN;AlN;Si;MOCVD |
公開日期: | 1-十一月-2014 |
摘要: | In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-mu m-thick GaN film gown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010 degrees C and a growth pressure of 50 Torr. |
URI: | http://dx.doi.org/10.1007/s13391-014-3164-0 http://hdl.handle.net/11536/123940 |
ISSN: | 1738-8090 |
DOI: | 10.1007/s13391-014-3164-0 |
期刊: | ELECTRONIC MATERIALS LETTERS |
Volume: | 10 |
起始頁: | 1063 |
結束頁: | 1067 |
顯示於類別: | 期刊論文 |