標題: Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates
作者: Binh Tinh Tran
Lin, Kung-Liang
Sahoo, Kartika Chandra
Chung, Chen-Chen
Chi-Lang Nguyen
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: GaN;AlN;Si;MOCVD
公開日期: 1-Nov-2014
摘要: In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-mu m-thick GaN film gown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010 degrees C and a growth pressure of 50 Torr.
URI: http://dx.doi.org/10.1007/s13391-014-3164-0
http://hdl.handle.net/11536/123940
ISSN: 1738-8090
DOI: 10.1007/s13391-014-3164-0
期刊: ELECTRONIC MATERIALS LETTERS
Volume: 10
起始頁: 1063
結束頁: 1067
Appears in Collections:Articles