Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor

doi:10.1109/LED.2014.2354598

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DC 欄位	值	語言
dc.contributor.author	Fuh, Chur-Shyang	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Huang, Wei-Hsun	en_US
dc.contributor.author	Sze, Simon M.	en_US
dc.date.accessioned	2015-07-21T11:20:41Z	-
dc.date.available	2015-07-21T11:20:41Z	-
dc.date.issued	2014-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2014.2354598	en_US
dc.identifier.uri	http://hdl.handle.net/11536/123941	-
dc.description.abstract	This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 degrees C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm(2)/Vs, threshold voltage (V-th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 degrees C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16x10(17) cm(-3)eV(-1) and 4.38x10(12) cm(-2) eV(-1), respectively. The positive bias stability of 400 degrees C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.	en_US
dc.language.iso	en_US	en_US
dc.subject	In-Zn-Sn-O TFTs	en_US
dc.subject	high mobility TFTs	en_US
dc.title	Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2014.2354598	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1103	en_US
dc.citation.epage	1105	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000344588100011	en_US
dc.citation.woscount	0	en_US
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