標題: | Submicron Cu/Sn Bonding Technology With Transient Ni Diffusion Buffer Layer for 3DIC Application |
作者: | Chang, Yao-Jen Hsieh, Yu-Sheng Chen, Kuan-Neng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | 3D integration;Cu/Sn bonding;transient Ni buffer layer |
公開日期: | 1-十一月-2014 |
摘要: | A submicron Cu/Sn bonding with transient Ni buffer layer at 225 degrees C is demonstrated to overcome current 5-mu m Cu/Sn physical limitation. The 10-nm Ni layer suppresses immense Cu/Sn interdiffusion during heating step prior to major bonding process. When the temperature is close to the Sn melting point, the Ni layer dissolves and molten Sn gives successful submicrometer Cu/Sn bonding. The excellent mechanical strength and electrical performance of this scheme show the great potential for future and highly dense 3D interconnects. |
URI: | http://dx.doi.org/10.1109/LED.2014.2358212 http://hdl.handle.net/11536/123942 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2014.2358212 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
Issue: | 11 |
起始頁: | 1118 |
結束頁: | 1120 |
顯示於類別: | 期刊論文 |