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dc.contributor.authorKo, FHen_US
dc.contributor.authorWeng, LYen_US
dc.contributor.authorKo, CJen_US
dc.contributor.authorChu, TCen_US
dc.date.accessioned2014-12-08T15:16:52Z-
dc.date.available2014-12-08T15:16:52Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2006.01.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/12395-
dc.description.abstractThe method to measure the imprint temperature variation of resist film with fluorescence probe technique was established. The maximal Rhodamine B concentration was 8 X 10(-4) M to achieve higher sensitivity and avoid precipitation problem. The temperature effect was a critical parameter on the temperature sensing, while imprinting pressure was not. The fluorescence intensity of Rhodamine B linearly decayed with time at various temperatures due to the formation of lactone-containing molecule during thermal stressing. The usual imprint time of less than 20 min was not affected by the signal decay effect due to limited percentage of signal variation during 100200 degrees C. The technique based on fluorescence probe method was successfully applied to measure the resist temperature variation of the imprint on the resist film of 6-in. wafer. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanoimprint lithographyen_US
dc.subjectimprinting temperature variationen_US
dc.subjectRhodamine B moleculeen_US
dc.titleCharacterization of imprinting polymeric temperature variation with fluorescent Rhodamine B moleculeen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2006.01.009en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume83en_US
dc.citation.issue4-9en_US
dc.citation.spage864en_US
dc.citation.epage868en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000237581900060-
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