完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Kuan-Hsien | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Chou, Wu-Ching | en_US |
dc.contributor.author | Chen, Hua-Mao | en_US |
dc.contributor.author | Tsai, Ming-Yen | en_US |
dc.contributor.author | Wu, Ming-Siou | en_US |
dc.contributor.author | Hung, Yi-Syuan | en_US |
dc.contributor.author | Hung, Pei-Hua | en_US |
dc.contributor.author | Hsieh, Tien-Yu | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.contributor.author | Chu, Ann-Kuo | en_US |
dc.contributor.author | Yeh, Bo-Liang | en_US |
dc.date.accessioned | 2015-07-21T11:20:53Z | - |
dc.date.available | 2015-07-21T11:20:53Z | - |
dc.date.issued | 2014-10-21 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4897236 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/123965 | - |
dc.description.abstract | This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel draininduced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation. (C) 2014 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4897236 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 116 | en_US |
dc.citation.issue | 15 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000344345400057 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |