標題: | Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks |
作者: | Tsai, Jyun-Yu Chang, Ting-Chang Chen, Ching-En Ho, Szu-Han Liu, Kuan-Ju Lu, Ying-Hsin Liu, Xi-Wen Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Lu, Ching-Sen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 6-十月-2014 |
摘要: | This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks. (C) 2014 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4896995 http://hdl.handle.net/11536/123970 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4896995 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 105 |
Issue: | 14 |
顯示於類別: | 期刊論文 |