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dc.contributor.authorLing, Shih-Chunen_US
dc.contributor.authorWang, Te-Chungen_US
dc.contributor.authorKo, Tsung-Shineen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:16:52Z-
dc.date.available2014-12-08T15:16:52Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1173-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/12401-
dc.description.abstractUltraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 run peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium, Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4en_US
dc.citation.spage1276en_US
dc.citation.epage1277en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256956600643-
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