Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

doi:10.1016/j.ssc.2014.10.019

標題:	Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications
作者:	Ismail, Muhammad Rana, Anwar Manzoor Talib, Ijaz Tsai, Tsung-Ling Chand, Umesh Ahmed, Ejaz Nadeem, Muhammad Younus Aziz, Abdul Shah, Nazar Abbas Hussain, Muhammad 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Resistive switching;Thin films;Sandwich;Metal;Poole-Frenkel conduction
公開日期:	1-一月-2015
摘要:	Fully transparent resistive random access memory (TRRAM) device based on Ce02 as active layer using indium-tin-oxide (ITO) electrodes was fabricated on glass substrate. The ITO/CeO2/ITO memory device shows 81% transmission of visible light, optical band gap energy of 4.05 eV, and exhibits reliable bipolar resistive switching behavior. X-ray diffraction of CeO2 thin films demonstrated a weak polycrystalline phase. The low field conduction is dominated by Ohmic type while Poole-Frenkel effect is responsible for conduction in the high field region. The device reliability investigations, such as data retention (over 10(4) s) under applied stress and endurance tests conducted at room temperature and 85 degrees C show potential of our TRRAM devices for future non-volatile memory applications. (C) 2014 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.ssc.2014.10.019 http://hdl.handle.net/11536/124050
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2014.10.019
期刊:	SOLID STATE COMMUNICATIONS
Volume:	202
起始頁:	28
結束頁:	34
顯示於類別：	期刊論文