完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, Wun-Kaien_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorHung, Ching-Huaen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorYau, Wei-Hungen_US
dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.date.accessioned2015-07-21T11:21:08Z-
dc.date.available2015-07-21T11:21:08Z-
dc.date.issued2014-12-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2014.07.148en_US
dc.identifier.urihttp://hdl.handle.net/11536/124089-
dc.description.abstractTiO2/ZnO films grown by atomic layer deposition (ALD) demonstrated nanotribological behaviors using scratch testing. TEM profiles obtained an amorphous structure TiO2 and nanocrystalline structure ZnO, whereas the sample has significant interface between the TiO2/ZnO films. The experimental results show the relative XRD peak intensities are mainly contributed by a wurtzite oxide ZnO structure and no signal from the amorphous TiO2. With respect to tribology, increased friction causes plastic deformation between the TiO2 and ZnO films, in addition to delamination and particle loosening. The plastic deformation caused by adhesion and/or cohesion failure is reflected in the nanoscratch traces. The pile-up events at a loading penetration of 30 nm were measured at 21.8 mu N for RT, 22.4 mu N for 300 degrees C, and 36 mu N for 400 degrees C. In comparison to the other conditions, the TiO2/ZnO films annealed at 400 degrees C exhibited higher scratch resistance and friction with large debris, indicating the wear volume is reduced with increased annealing temperature and loading. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCVD coatingsen_US
dc.subjectNanotribologyen_US
dc.subjectScratch testingen_US
dc.subjectSliding frictionen_US
dc.titleNanotribological properties of ALD-processed bilayer TiO2/ZnO filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2014.07.148en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume54en_US
dc.citation.issue12en_US
dc.citation.spage2754en_US
dc.citation.epage2759en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000346954100017en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文


文件中的檔案:

  1. 000346954100017.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。