Origin of traps and charge transport mechanism in hafnia

Full metadata record

DC Field	Value	Language
dc.contributor.author	Islamov, D. R.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, A.	en_US
dc.date.accessioned	2015-07-21T11:20:24Z	-
dc.date.available	2015-07-21T11:20:24Z	-
dc.date.issued	2014-12-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4903169	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124103	-
dc.description.abstract	In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Origin of traps and charge transport mechanism in hafnia	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4903169	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	105	en_US
dc.citation.issue	22	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000346265200061	en_US
dc.citation.woscount	3	en_US
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.