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dc.contributor.authorLiu, Kuan-Juen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYang, Ren-Yaen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng-Tungen_US
dc.date.accessioned2015-07-21T11:20:23Z-
dc.date.available2015-07-21T11:20:23Z-
dc.date.issued2014-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2014.08.031en_US
dc.identifier.urihttp://hdl.handle.net/11536/124111-
dc.description.abstractThis letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFloating body effect (FBE)en_US
dc.subjectHot carrier effect (HCE)en_US
dc.subjectSilicon-on-insulator (SOI)en_US
dc.titleAbnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2014.08.031en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume572en_US
dc.citation.spage39en_US
dc.citation.epage43en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000346056100008en_US
dc.citation.woscount0en_US
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