Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

doi:10.7567/JJAP.53.110311

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chiang, Che-Yang	en_US
dc.contributor.author	Hsu, Heng-Tung	en_US
dc.contributor.author	Chang, Edward Y.	en_US
dc.date.accessioned	2015-07-21T11:20:38Z	-
dc.date.available	2015-07-21T11:20:38Z	-
dc.date.issued	2014-11-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.53.110311	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124133	-
dc.description.abstract	A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P-idB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth. (C) 2014 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.53.110311	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	53	en_US
dc.citation.issue	11	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000346462200011	en_US
dc.citation.woscount	0	en_US
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