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dc.contributor.authorShieh, MSen_US
dc.contributor.authorSang, JYen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorWang, SDen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:16:57Z-
dc.date.available2014-12-08T15:16:57Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.3159en_US
dc.identifier.urihttp://hdl.handle.net/11536/12415-
dc.description.abstractWe demonstrate the fabrication process and the electrical characteristics of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) with different numbers of channel stripes.-The device's electrical characteristics, such as on-current, threshold voltage, and subthreshold swing, were improved by increasing the number of channel stripes due to the enhancement of gate control. However, the electric field strength near the drain side was enlarged in multi-channel structures, causing severe impact ionization. The degradation of device's reliability under various electrical stress conditions was suggested.en_US
dc.language.isoen_USen_US
dc.subjectmulti-channelen_US
dc.subjectgate control capabilityen_US
dc.subjectpoly-Si TFTsen_US
dc.subjectelectrical stressen_US
dc.titleElectrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.3159en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue4Ben_US
dc.citation.spage3159en_US
dc.citation.epage3164en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000237570600054-
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