Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

doi:10.1143/JJAP.45.3442

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, HW	en_US
dc.contributor.author	Chu, JT	en_US
dc.contributor.author	Kao, CC	en_US
dc.contributor.author	Hsueh, TH	en_US
dc.contributor.author	Lu, TC	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Wang, SC	en_US
dc.contributor.author	Yu, CC	en_US
dc.contributor.author	Kuo, SY	en_US
dc.date.accessioned	2014-12-08T15:16:57Z	-
dc.date.available	2014-12-08T15:16:57Z	-
dc.date.issued	2006-04-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.45.3442	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12416	-
dc.description.abstract	The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.	en_US
dc.language.iso	en_US	en_US
dc.subject	gallium nitride (GaN)	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	excimer laser	en_US
dc.title	Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1143/JJAP.45.3442	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	45	en_US
dc.citation.issue	4B	en_US
dc.citation.spage	3442	en_US
dc.citation.epage	3445	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000237570600112	-
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