標題: TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density
作者: Cheng, Chun-Hu
Hsu, Hsiao-Hsuan
Chou, Kun-I
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Indium Phosphide (InP);TiLaO;Equivalent Oxide Thickness (EOT)
公開日期: 1-Apr-2015
摘要: We report a low-temperature InP p-MOS with a high capacitance density of 2.7 mu F/cm(2), low leakage current of 0.77 A/cm(2) at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-kappa TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to <1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.
URI: http://dx.doi.org/10.1166/jnn.2015.9208
http://hdl.handle.net/11536/124182
ISSN: 1533-4880
DOI: 10.1166/jnn.2015.9208
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 15
起始頁: 2810
結束頁: 2813
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