標題: Selective deposition of gold particles on dip-pen nanolithography patterns on silicon dioxide surfaces
作者: Sheu, JT
Wu, CH
Chao, TS
材料科學與工程學系奈米科技碩博班
電子物理學系
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: dip-pen nanolithography;AFM tip;N-(2-aminoethyl)-3-aminopropyltrimethoxysilane;gold nanoparticles;X-ray photoelectron spectroscopy;lateral force microscopy
公開日期: 1-四月-2006
摘要: We report a novel platform to perform selective deposition of gold nanoparticles on dip-pen nanolithographic patterns on SiO2 surfaces. An "inked" atomic force microscope (AFM) tip was adopted to deposit 2.2mM organic N-(2-aminoethyl)-3aminopropyltriniethoxysilane (AEAPTMS) Molecules in nanopatterns through a water meniscus onto a SiO2, substrate under ambient conditions; the molecules act as linkers for the selective deposition of gold nanoparticles on the SiO2 surface. Conditions for dip-pen nanolithography of organic nanopatterns of AEAPTMS were investigated. In addition, gold nanoparticles with negatively-charged citrate Surfaces were deposited selectively on top of the organic patterns. X-ray photoelectron spectroscopy was then used to evaluate the presence of gold nanoparticles on the SiO2 surface. Lateral force microscopy was utilized to differentiate the surface between oxidized semiconductors and patterned areas with monolayer of AEAPTMS. Linewidths down to 60 nm have been successfully achieved by this method.
URI: http://dx.doi.org/10.1143/JJAP.45.3693
http://hdl.handle.net/11536/12419
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.3693
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 4B
起始頁: 3693
結束頁: 3697
顯示於類別:會議論文


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