完整後設資料紀錄
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dc.contributor.authorCheng, Cheng-Enen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorDinelli, Francoen_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.contributor.authorChien, Forest Shih-Senen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2019-04-03T06:41:38Z-
dc.date.available2019-04-03T06:41:38Z-
dc.date.issued2015-01-28en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep08091en_US
dc.identifier.urihttp://hdl.handle.net/11536/124203-
dc.description.abstractUnderstanding the elastic response on the nanoscale phase boundaries of multiferroics is an essential issue in order to explain their exotic behaviour. Mixed-phase BiFeO3 films, epitaxially grown on LaAlO3 (001) substrates, have been investigated by means of scanning probe microscopy to characterize the elastic and piezoelectric responses in the mixed-phase region of rhombohedral-like monoclinic (M-I) and tilted tetragonal-like monoclinic (M-II,M-tilt) phases. Ultrasonic force microscopy reveal that the regions with low/ high stiffness values topologically coincide with the M-I/M-II,M-tilt phases. X-ray diffraction strain analysis confirms that the M-I phase is more compliant than the M-II,(tilt) one. Significantly, the correlation between elastic modulation and piezoresponse across the mixed-phase regions manifests that the flexoelectric effect results in the enhancement of the piezoresponse at the phase boundaries and in the M-I regions. This accounts for the giant electromechanical effect in strained mixed-phase BiFeO3 films.en_US
dc.language.isoen_USen_US
dc.titleRevealing the flexoelectricity in the mixed-phase regions of epitaxial BiFeO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep08091en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000348436500005en_US
dc.citation.woscount17en_US
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