新穎材料開發關鍵核心設施計畫---雷射分子束氧化物磊晶平台之延伸

Abstract

氧化物材料具有多樣之結構特性，可以形成簡單之二元氧化物， 亦可形成複雜之多元氧化物，同時包含許多特殊之優良性質，舉 凡超導特性、巨磁阻特性、焦電、壓電、介電、半導、導電、磁 性、光性等，幾乎包含所有物理性質。氧化物電子目前正蓬勃之 發展，為下一個世代之電子元件提供另一種解決方案。 本計劃第一年已獲補助建立雷射分子束磊晶，可以快速大幅提升 我國學界與業界在氧化物磊晶研發之實力。計劃要建立之系統雷 射分子束磊晶平台，將具有高工作氣壓之RHEED 來進行臨場薄膜 之成長，這樣的系統可以提供氧化物磊晶薄膜技術龐大之資料 庫。此一磊晶成長平台之建立，可以快速提昇我國於氧化物磊晶 成長之基礎能力，可以繼續利用此平台研發新穎與新功能之材 料。高品質之材料為固態物理研究之基石，此平台建立後，已經 為以量測為主之研究群，提供樣品確保其樣品之品質。另外對於 成長氧化物磊晶有興趣之研究群，這樣的平台提供共同研發之機 會，可以藉由計畫主持人長期之經驗，快速的建立起新製程，以 利其他研究群材料之快速開發。此一平台亦提供業界快速取得多 功能與高品質之氧化物磊晶，有助於縮短業界開發新製程與元件 之研發時間，同時間由於各種氧化物搭配，亦可由此一平台提供， 亦可提供業界元件製程與整合所遇到困難之解決方案。 今年之提案，將計畫延伸此平台之完整性與功能性。目前平台之 研發時程，受制於前段基板之檢測，與後續薄膜性能之分析，以 致於研發速度受限，因此今年度希望可以在此系統上增加超高真 空掃描系統，此系統除了可以解決目前成長系統研發速度受限之 缺點，亦可提供另一個快速與安全平台，可以讓成長我之高品質 磊晶薄膜立即進行特性之量測，此兩部分將相輔相成，可以將我 國氧化物磊晶之技術更往前邁進一步，此系統將成為國內成長氧 化物薄膜之模範平台，可以厚植本國在此領域研發之能力。

Oxide materials are gifted systems, providing a variety of physical properties, including superconducting, ferroelectric, piezoelectric, magnetic, CMR, optical, conducting and et al. The combinations of these properties provide new solutions of next-generation electron devices. The goal of this project is to build up a laser molecule beam epitaxy (Laser MBE) system to fabricate epitaxial oxide heterostructures. Because it has the advantages of high quality epitaxial growth, fast optimization, and good composition and interface control, it has been a core technology on developing oxide heterostructures for many years. Such a platform will greatly promote the ability of studying oxide electronics in academia and industry. The laser MBE proposed here will combine high pressure RHEED to in-situ monitor the growth of oxide films. Such a system will help us to build up a database for oxide epitaxial growth and to understand the fundamental physics in behind. This new platform can be used to develop new functional oxide materials and heterostructures. It can also be used to provide high-quality epitaxial oxide films for research groups to do other detailed measurements. It can also be used as a platform for industry to develop new oxide devices. It will be an efficient approach to integrate research energy in academia and industry. Last year, we have built up the Laser-MBE system, it shows the capability to control the film growth. However, the time-limiting step for such a system right now is the lack of the ability of the substrate characterization before the growth, and film quality characterization after the growth. In this year, we propose that to build up an ultra high vacuum scanning probe microscope (UHV-SPM) connecting with the current laser MBE system, which will provide us an environment to in-situ characterize the quality of the substrates, to understand the properties of our new functional oxide epitaxial films. The combination of laser MBE and UHV-SPM will be a powerful and fast tool to develop the basic understanding of oxide films, which will be useful to academic research and industry.