Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

doi:10.1149/2.0101502jss

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DC Field	Value	Language
dc.contributor.author	Chang, Tai-Min	en_US
dc.contributor.author	Fang, Hsin-Kai	en_US
dc.contributor.author	Liao, Cheng	en_US
dc.contributor.author	Hsu, Wen-Yang	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2015-07-21T08:29:03Z	-
dc.date.available	2015-07-21T08:29:03Z	-
dc.date.issued	2015-01-01	en_US
dc.identifier.issn	2162-8769	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/2.0101502jss	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124225	-
dc.description.abstract	Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.0101502jss	en_US
dc.identifier.journal	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY	en_US
dc.citation.spage	R20	en_US
dc.citation.epage	R22	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000348412100015	en_US
dc.citation.woscount	0	en_US
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