Title: | Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate |
Authors: | Chang, Tai-Min Fang, Hsin-Kai Liao, Cheng Hsu, Wen-Yang Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering |
Issue Date: | 1-Jan-2015 |
Abstract: | Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved. |
URI: | http://dx.doi.org/10.1149/2.0101502jss http://hdl.handle.net/11536/124225 |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.0101502jss |
Journal: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Begin Page: | R20 |
End Page: | R22 |
Appears in Collections: | Articles |