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dc.contributor.authorLee, WNen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, JHen_US
dc.contributor.authorGuo, XJen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorKu, HCen_US
dc.date.accessioned2014-12-08T15:16:58Z-
dc.date.available2014-12-08T15:16:58Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2005.12.085en_US
dc.identifier.urihttp://hdl.handle.net/11536/12424-
dc.description.abstractA series of quaternary-diluted magnetic semiconductors, (In1-y,Al-y)(1-x)MnxAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (ln(0.52)Al(0.48))(1-x)MnxAs with x <= 0.11 were grown on a nearly lattice-matched In0.52Al0.48As buffer, while the (In1-y,Al-y)(1-x)MnxAs with a higher Mn content of 0.11 < x <= 0.18 were grown on a graded 3-layer In,-,,Al-y 'As buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In1-yAly)(1-x),Mn,As epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In1-y,Al-y)(1-x)MnxAs semiconductors exhibit a paramagnetic-like state for x <= 0.05 while a ferromagnetic state for x >= 0.05, and the Curie temperature of ferromagnetic (In1-yAly)(1-x) MnxAs increases with increasing Mn content. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMBEen_US
dc.subject(Inen_US
dc.subjectAlen_US
dc.subjectMn) Asen_US
dc.subjectdiluted ferrornagnetic semiconductoren_US
dc.titleMBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2005.12.085en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume289en_US
dc.citation.issue2en_US
dc.citation.spage502en_US
dc.citation.epage505en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000236440400016-
dc.citation.woscount3-
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