Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn) As

標題:	Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn) As
作者:	Chen, YF Lee, WN Huang, JH Chin, TS Guo, XJ Ku, HC 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	diluted magnetic semiconductor;(In, Al, Mn) As;spintronics;low-temperature annealing;magnetic properties
公開日期:	1-十月-2005
摘要:	The effects of low-temperature (210 degrees C-290 degrees C) annealing on the microstructure, lattice constant, and magnetic properties of (In0.52Al0.48)(0.91)Mn0.09As grown by low-temperature molecular-beam epitaxy were studied. The results show that low-temperature annealing has little influence on the crystalline structure and interface quality Of (In0.52Al0.48)(0.91)Mn0.09As epilayer. In contrast, both the lattice constant and Curie temperature of (In0.52Al0.48)(0.91)Mn0.09As are found to be strongly dependent on the annealing temperature. The lattice constant linearly decreases with increasing annealing temperature; while the Curie temperature increases with increasing annealing temperature up to 250 degrees C, and then abruptly decreases upon further annealed at 270 degrees C and 290 degrees C.
URI:	http://dx.doi.org/10.1109/TMAG.2005.854687 http://hdl.handle.net/11536/13209
ISSN:	0018-9464
DOI:	10.1109/TMAG.2005.854687
期刊:	IEEE TRANSACTIONS ON MAGNETICS
Volume:	41
Issue:	10
起始頁:	2724
結束頁:	2726
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。