標題: Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing
作者: Chen, C. H.
Niu, H.
Yan, D. C.
Hsieh, H. H.
Huang, R. T.
Chi, C. C.
Lee, C. P.
奈米科技中心
Center for Nanoscience and Technology
關鍵字: Diluted magnetic semiconductor;Ferromagnetism;Ion implantation;Ion beam induced epitaxial crystallization
公開日期: 15-八月-2014
摘要: In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2014.03.162
http://hdl.handle.net/11536/24830
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2014.03.162
期刊: APPLIED SURFACE SCIENCE
Volume: 310
Issue: 
起始頁: 210
結束頁: 213
顯示於類別:期刊論文


文件中的檔案:

  1. 000338805800035.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。