完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Chen, C. H. | en_US |
| dc.contributor.author | Niu, H. | en_US |
| dc.contributor.author | Yan, D. C. | en_US |
| dc.contributor.author | Hsieh, H. H. | en_US |
| dc.contributor.author | Huang, R. T. | en_US |
| dc.contributor.author | Chi, C. C. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.date.accessioned | 2014-12-08T15:36:29Z | - |
| dc.date.available | 2014-12-08T15:36:29Z | - |
| dc.date.issued | 2014-08-15 | en_US |
| dc.identifier.issn | 0169-4332 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2014.03.162 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/24830 | - |
| dc.description.abstract | In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Diluted magnetic semiconductor | en_US |
| dc.subject | Ferromagnetism | en_US |
| dc.subject | Ion implantation | en_US |
| dc.subject | Ion beam induced epitaxial crystallization | en_US |
| dc.title | Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/j.apsusc.2014.03.162 | en_US |
| dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
| dc.citation.volume | 310 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 210 | en_US |
| dc.citation.epage | 213 | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| 顯示於類別： | 期刊論文 | |
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- Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing / Chen, C. H.;Niu, H.;Yan, D. C.;Hsieh, H. H.;Huang, R. T.
- Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization / Chen, Nai-Hui;Chen, Chien-Hsu;Lee, Chien-Ping
- Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization / Chen, Nai-Hui;Chen, Chien-Hsu;Lee, Chien-Ping
- Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing / Chen, C. H.;Niu, H.;Yan, D. C.;Hsieh, H. H.;Lee, C. P.
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