標題: | Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing |
作者: | Chen, C. H. Niu, H. Yan, D. C. Hsieh, H. H. Huang, R. T. Chi, C. C. Lee, C. P. 奈米科技中心 Center for Nanoscience and Technology |
關鍵字: | Diluted magnetic semiconductor;Ferromagnetism;Ion implantation;Ion beam induced epitaxial crystallization |
公開日期: | 15-八月-2014 |
摘要: | In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. (C) 2014 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.apsusc.2014.03.162 http://hdl.handle.net/11536/147728 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2014.03.162 |
期刊: | APPLIED SURFACE SCIENCE |
Volume: | 310 |
起始頁: | 210 |
結束頁: | 213 |
顯示於類別: | 期刊論文 |