標題: | Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy |
作者: | Yu, Ing-Song Chang, Chun-Pu Yang, Chung-Pei Lin, Chun-Ting Ma, Yuan-Ron Chen, Chun-Chi 光電系統研究所 Institute of Photonic System |
關鍵字: | Molecular beam epitaxy;Gallium nitride;Quantum dots;Scanning photoemission microscopy;Reflection high-energy electron diffraction;Droplet epitaxy;Reflection high-energy electron diffraction;X-ray photoelectron spectroscopy |
公開日期: | 17-Dec-2014 |
摘要: | In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 x 10(10) to 1.1 x 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600 degrees C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and mu-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots. |
URI: | http://dx.doi.org/10.1186/1556-276X-9-682 http://hdl.handle.net/11536/124257 |
ISSN: | 1556-276X |
DOI: | 10.1186/1556-276X-9-682 |
期刊: | NANOSCALE RESEARCH LETTERS |
Appears in Collections: | Articles |
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