標題: The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors
作者: Xu, Lei
Huang, Chun-Wei
Abliz, Ablat
Hua, Yang
Liao, Lei
Wu, Wen-Wei
Xiao, Xiangheng
Jiang, Changzhong
Liu, Wei
Li, Jinchai
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2-Feb-2015
摘要: To improve the performance of ZnO thin film transistors (TFTs) by using appropriate metal contacts, the different roles of contact materials between oxidation interlayer and doping effect are investigated. With careful characterization, an oxidation interlayer has been verified at the interface between ZnO film and Al or Ti contact, which is suggested to be responsible for contact resistance and thermal reliability. On the other hand, it is observed that the doping effect is the main reason for the Sn or Cu contact characteristics. The superior contact using Sn is due to an oxidation-free interface, donor doping effect, and a low barrier height. By using a metal contact with a high Gibbs free energy, the metal layer would hardly consume oxygen from channel layer during sputtering and easily form no oxidation interlayer. Thus, choosing a metal contact is important when fabricating high-performance metal-oxide TFTs for flat-panel displays. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4907680
http://hdl.handle.net/11536/124336
ISSN: 0003-6951
DOI: 10.1063/1.4907680
期刊: APPLIED PHYSICS LETTERS
Volume: 106
Appears in Collections:Articles