標題: Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation
作者: Lee, Ko-Chun
Fan, Ming-Long
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: TFET;Work-function variation;Analog FOM;Output resistance;Intrinsic gain;Cutoff frequency
公開日期: 1-Feb-2015
摘要: This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain-current ratio (g(m)/I-DS), output resistance (R-out) and intrinsic gain, and comparable variability in g(m) and cutoff frequency (f(T)) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g., g(m) and R-out) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies. (C) 2014 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2014.11.012
http://hdl.handle.net/11536/124338
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2014.11.012
期刊: MICROELECTRONICS RELIABILITY
Volume: 55
起始頁: 332
結束頁: 336
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