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dc.contributor.authorChang, Chia-Haoen_US
dc.contributor.authorLi, Zong-Linen_US
dc.contributor.authorLu, Hong-Tingen_US
dc.contributor.authorPan, Chien-Hungen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2015-07-21T08:28:58Z-
dc.date.available2015-07-21T08:28:58Z-
dc.date.issued2015-02-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2014.2362151en_US
dc.identifier.urihttp://hdl.handle.net/11536/124358-
dc.description.abstractThe electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.en_US
dc.language.isoen_USen_US
dc.subjectInP-baseden_US
dc.subjectshort-wavelength infrareden_US
dc.subject'W'-type quantum wellsen_US
dc.subjectInAlGaAs separate confined layeren_US
dc.titleLow-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2014.2362151en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume27en_US
dc.citation.spage225en_US
dc.citation.epage228en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000349190700001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles


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