Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate

doi:10.1109/LPT.2014.2362151

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Chia-Hao	en_US
dc.contributor.author	Li, Zong-Lin	en_US
dc.contributor.author	Lu, Hong-Ting	en_US
dc.contributor.author	Pan, Chien-Hung	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2015-07-21T08:28:58Z	-
dc.date.available	2015-07-21T08:28:58Z	-
dc.date.issued	2015-02-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2014.2362151	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124358	-
dc.description.abstract	The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.	en_US
dc.language.iso	en_US	en_US
dc.subject	InP-based	en_US
dc.subject	short-wavelength infrared	en_US
dc.subject	'W'-type quantum wells	en_US
dc.subject	InAlGaAs separate confined layer	en_US
dc.title	Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2014.2362151	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.spage	225	en_US
dc.citation.epage	228	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000349190700001	en_US
dc.citation.woscount	0	en_US
顯示於類別：	期刊論文