標題: | Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates |
作者: | Pan, Chien-Hung Chang, Chia-Hao Lee, Chien-Ping 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | InP-based;midinfrared lasers;optically pumped;type-II "W" type quantum wells |
公開日期: | 1-七月-2012 |
摘要: | The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system. |
URI: | http://hdl.handle.net/11536/16250 |
ISSN: | 1041-1135 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 24 |
Issue: | 13 |
結束頁: | 1145 |
顯示於類別: | 期刊論文 |