標題: Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates
作者: Pan, Chien-Hung
Chang, Chia-Hao
Lee, Chien-Ping
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InP-based;midinfrared lasers;optically pumped;type-II "W" type quantum wells
公開日期: 1-七月-2012
摘要: The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.
URI: http://hdl.handle.net/11536/16250
ISSN: 1041-1135
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 24
Issue: 13
結束頁: 1145
顯示於類別:期刊論文


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